CETC announced a new breakthrough in the field of silicon carbide

On April 17, CETC announced that the first 750V silicon carbide power chip jointly developed by its 55 institutes and FAW has completed tape-out, and the first nationally produced 1200V plastic-encapsulated 2in1 silicon carbide power module has completed the trial production of A sample.

CETC announced a new breakthrough in the field of silicon carbide

According to the report, in the 750V silicon carbide power chip project, the technical teams of the two parties jointly tackle key problems from the dimensions of structural design, process technology, and material application, and promote the technology of silicon carbide power chips to reach the international advanced level, which has now entered the product-level testing stage;

In the 2in1 silicon carbide power module project, the technical teams of both sides carried out joint research on new structures, new processes, and new materials to realize chip substrate and epitaxial material preparation, chip wafer design and production, packaging structure design, plastic packaging process development and the independent innovation of the whole process of key links such as module trial production has laid the foundation for the full autonomy and national production of silicon carbide power semiconductor design and production.

It is understood that centering on the major strategic needs of national technological innovation and industrial development, CETC actively undertakes major tasks related to national security, industrial foundation and core competitiveness, and has achieved outstanding results in key core technology research and cutting-edge disruptive technology layout. Among them, in the field of third-generation semiconductors, China Electronics Technology has reported success frequently.

The 13th Institute of China Electronics Technology Co., Ltd. began to conduct process research on silicon carbide materials and devices since 2004. In 2017, it realized the batch production and supply of 4-inch silicon carbide power electronics process lines. In 2019, it completed the silicon carbide power electronics 6 inch craft line. In September 2022, the technical teams of 13 institutes completed the development of the third-generation silicon carbide SBD and third-generation silicon carbide MOSFET products based on the 6-inch process line, and the product indicators can be compared with international first-line brands.

In February 2022, CETC 2's laser lift-off project made a breakthrough. Based on the collaborative research and development of technology and equipment, the laser lift-off of 4-inch and 6-inch silicon carbide single wafers was realized.

In July 2022, CETC 45 announced that the double 8-inch full-line automatic wet-process complete line equipment developed by CETC has entered the domestic mainstream FAB factory. It is reported that the entire line of equipment meets the 8-inch 90nm-130nm process node, and is suitable for wet chemical processes in the 8-12-inch BCD chip process.

In September 2022, CCTV's "Extraordinary Ten Years to Watch Famous Enterprises" featured a special report on the important breakthroughs made by 55 in the field of silicon carbide devices, as well as the batch application of products in new energy vehicles. According to news from CCTV Finance at the time, CETC’s silicon carbide device loading capacity has reached 1 million units, and its subsidiaries have achieved large-scale production of 6-inch silicon carbide wafers, with an annual production capacity of 150,000 pieces, ranking among the top in China. In March 2022, it was also the first to release a new generation of 8-inch silicon carbide wafer products.

On the equipment side where SiC customization and research and development are more difficult, CETC 48 focuses on special equipment such as epitaxy, injection, oxidation, and activation, combined with general-purpose equipment such as vertical diffusion furnaces, PVD, and semiconductor chip production line construction experience. Realize the only full coverage from silicon carbide epitaxy to chip core equipment in China, and further help domestic silicon carbide chip manufacturing to "change lanes and overtake".

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